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S T M6610
S amHop Microelectronics C orp. Dec. 11 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
30V
F E AT UR E S S uper high dense cell design for low R DS (ON).
( m ) Max
ID
8.5A
R DS (ON)
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
D1
8
19 @ V G S = 10V 28 @ V G S = 4.5V
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage G ate-S ource Voltage Drain C urrent-C ontinuous @ T a -P ulsed
b a
S ymbol VDS VG S 25 C 70 C IDM IS PD T a=70 C ID
N-Channel 30 20 8.5 6.5 40 1.7 2
Unit V V A A A A W
Drain-S ource Diode F orward C urrent a Maximum P ower Dissipation a Operating J unction and S torage Temperature R ange T a= 25 C
1.44 TJ, TS TG -55 to 150 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W
1
S T M6610
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
Parameter
5
S ymbol
BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS
c
Condition
VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID =8A VGS =4.5V, ID =5A VDS = 15V, VGS = 10V VDS = 10V, ID =8A
Min Typ C Max Unit
30 1 10 1.0 1.8 15 20 20 15 620 180 110 3 19 V uA uA V
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
28 m ohm A S
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =15V, VGS = 0V f =1.0MHZ
PF PF PF
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
2
VDD = 15V, ID = 7A, R L=2.1 ohm, VGS = 10V, RGEN = 6 ohm VDS =15V, ID =8A,VGS =10V VDS =15V, ID =8A,VGS =4.5V VDS =15V, ID = 8A, VGS =10V
12 15.5 42 8 12.5 6.5 1.4 3.5
ns ns ns ns nC nC nC nC
S T M6610
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
b
Condition
VGS = 0V, Is =1.7A
Min Typ Max Unit
0.8 1.2 V
C
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD
Notes a.Surface Mounted on FR4 Board,t 10sec. b.Pulse Test:Pulse Width 300 s,Duty Cycle 2%. c.Guaranteed by design,not subject to production testing.
5
45 VGS=10V 36 VGS=4.5V
20
16
ID, Drain Current(A)
ID, Drain Current (A)
VGS=4V 27
VGS=3.5V 12 Tj=125 C 8 25 C 4 0 -55 C
18
VGS=3V
9 VGS=2.5V 0 0 0.5 1 1.5 2 2.5 3
0
0.7
1.4
2.1
2.8
3.5
4.2
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
42 1.5
Figure 2. Transfer Characteristics
R DS (ON), On-R es is tance Normalized
35
1.4 1.3 1.2 1.1 1.0 0
V G S =4.5V ID=5A V G S =10V ID=8A
R DS (on) (m )
28 V G S =4.5V 21 14 7 1 1 V G S =10V
9
18
27
36
45
0
25
50
75
100
125
150
T j( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
3
S T M6610
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
48
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
ID=8A
Is , S ource-drain current (A)
40
10.0
R DS (on) (m )
32 125 C 24 16 75 C 8 0 25 C
25 C 125 C 75 C
0
2
4
6
8
10
1.0 0.2
0.4
0.6
0.8
1.0
1.2
V G S , G ate-S ource Voltage (V )
V S D, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T M6610
V G S , G ate to S ource V oltage (V )
900 750
10 8 6 4 2 0 VDS =15V ID=7A
C, Capacitance (pF)
Ciss 600 450 300 Coss 150 Crss 0 0 5 10 15 20 25 30
6
0
2
4
6
8
10
12
14 16
VDS, Drain-to Source Voltage (V)
Qg, T otal G ate C harge (nC )
F igure 8. C apacitance
250
Tr
F igure 9. G ate C harge
50 10
R (O DS N) L im it
S witching T ime (ns )
10m 100
1s
100 60 10
ID, Drain C urrent (A)
s
T D(off) Tf T D(on)
ms
1
DC
1 1
V DS =15V ,ID=7A V G S =10V
0.1 0.03
VGS =10V S ingle P ulse T A=25 C 0.1 1 10 30 50
6 10
60 100 300 600
R g, G ate R es is tance ()
F igure 11.s witching characteris tics
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe O perating Area
9
Normalized Transient
Thermal Resistance
1
0.5
0.2
0.1
0.1 0.05 0.02 0.01
P DM t1 t2 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2
0.01 0.00001 0.0001
Single Pulse 0.001 0.01 0.1 1 10
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
5
S T M6610
PAC K AG E OUT LINE DIME NS IONS S O-8
1 L
E D
0.015X45
A
0.008 TYP.
e
0.05 TYP.
B
0.016 TYP.
A1
C
H
MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8
6
S T M6610
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:
PACKAGE SOP 8N 150 A0
6.40
B0
5.20
K0
2.10
D0
1.5 (MIN)
D1
1.5 + 0.1 - 0.0
E
12.0 0.3
E1
1.75
E2
5.5 0.05
P0
8.0
P1
4.0
P2
2.0 0.05
T
0.3 0.05
SO-8 Reel
UNIT:
TAPE SIZE
12
REEL SIZE
330
M
330 1
N
62 1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
12.75 + 0.15
K
S
2.0 0.15
G
R
V
7

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